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| HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Features * * Outline Dimensions Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V Operation 2 3 1 Pin 1: Source Pin 2: Gate Pin 3: Drain * * Description The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +7V -5V IDSS 2mA 150C -65 to +150C 0.7W PB Package (SOT-23) Electrical Specifications (TA=25C) f=1900 MHz for all RF Tests Symbol IDSS VP Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Pinch-off Voltage at VDS=3V, ID=20mA Transconductance at VDS=3V, ID=200mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS Units mA V mS C/W Min. 300 -3.5 Typ. 400 -2.0 220 45 Max. -1.5 - gm Rth P1dB dBm 22.5 24.5 - G1dB dB 8.0 - PAE % 40.0 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Typical Performance at 25C Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V Po (dBm) 25 20 15 30 10 Gain 5 0 -8 -4 0 4 8 12 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V Po (dBm) 30 25 20 15 Gain 10 5 0 0 5 10 15 20 PAE (%) 60 50 40 30 20 10 0 Pin (dBm) Po Gain Eff Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=200mA Po (dBm) 30 25 20 15 Gain 10 5 0 0.7 0.8 0.9 1.0 20 10 0 1.1 f (GHz) PAE (%) 60 50 40 30 Po Gain PAE Power Derating Curve Total Power Dissipation,PT (W) 1 (25,0.7) (150,0) 0 0 50 100 150 225 Case Temperature,TC () Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL27NPB L-Band GaAs Power FET Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS (GHz) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 lS11l 0.782 0.743 0.741 0.704 0.692 0.690 0.668 0.663 0.655 0.650 0.642 0.638 0.632 0.630 0.632 0.626 0.624 0.615 0.621 0.617 0.619 0.611 0.608 0.604 0.605 0.594 0.595 0.596 0.586 0.591 0.585 0.579 0.573 0.563 0.559 0.553 ANG -80.72 -92.29 -104.32 -114.72 -123.90 -132.50 -141.17 -148.35 -155.54 -161.95 -168.50 -174.31 179.77 174.55 169.05 163.68 159.10 153.93 149.48 144.89 140.97 136.20 132.33 128.49 124.44 120.30 116.61 112.03 108.46 103.89 99.90 95.08 91.24 86.73 83.08 78.88 lS21l 8.369 7.733 7.190 6.681 6.228 5.824 5.452 5.108 4.808 4.560 4.305 4.093 3.894 3.723 3.555 3.404 3.260 3.127 3.015 2.909 2.810 2.716 2.633 2.558 2.489 2.420 2.359 2.295 2.250 2.207 2.163 2.114 2.072 2.028 1.998 1.957 ANG 121.65 113.66 105.78 98.92 91.84 85.20 79.37 73.58 68.05 62.71 57.61 52.44 47.53 42.88 38.20 33.61 28.94 24.65 20.37 16.20 12.19 8.04 3.90 -0.14 -4.19 -8.26 -12.37 -16.34 -20.12 -24.16 -28.20 -32.27 -36.20 -40.20 -44.27 -48.11 lS12l 0.033 0.039 0.044 0.048 0.053 0.058 0.062 0.066 0.071 0.075 0.081 0.084 0.089 0.093 0.098 0.103 0.107 0.111 0.116 0.121 0.126 0.131 0.136 0.141 0.146 0.152 0.156 0.160 0.165 0.170 0.175 0.180 0.187 0.191 0.197 0.203 ANG 63.29 59.29 56.19 53.99 50.64 47.76 45.25 43.04 39.79 37.29 35.25 32.74 29.69 26.86 24.77 21.74 19.28 16.85 14.41 11.64 8.30 6.34 3.09 0.40 -1.90 -5.07 -8.08 -11.11 -13.83 -17.07 -19.48 -22.19 -25.09 -28.00 -31.12 -34.36 lS22l 0.077 0.080 0.090 0.093 0.101 0.105 0.113 0.115 0.121 0.112 0.129 0.120 0.130 0.120 0.137 0.142 0.138 0.150 0.150 0.153 0.154 0.159 0.155 0.157 0.163 0.157 0.158 0.184 0.166 0.173 0.172 0.186 0.177 0.181 0.171 0.166 ANG -158.85 -157.76 -166.06 -167.17 -168.56 -173.75 179.21 177.13 176.36 167.41 165.74 160.75 160.23 153.45 145.65 148.58 139.67 139.18 135.43 138.27 130.48 131.47 126.60 123.67 123.15 124.45 115.85 117.43 118.10 111.63 112.13 108.13 111.32 108.09 107.08 108.36 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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